Transport of electrons in a GaAs quantum well in high electric fields

被引：0
|
作者：
J. Požela
K. Požela
R. Raguotis
V. Juciené
机构：
[1] Semiconductor Physics Institute,
来源：
Semiconductors | 2009年 / 43卷
关键词：
73.63.Hs; 72.20.Ht; 72.10.Di;
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学科分类号：
摘要：
The rates of intrasubband and intersubband scattering of electrons by polar optical and intervalley phonons are determined in relation to the electron energy and width of a deep rectangular quantum well in GaAs. The Monte Carlo method was used to calculate the field dependences of the electron’s drift velocity in quantum wells with the width of 10, 20, and 30 nm. It is shown that the drift velocity in high electric fields in a quantum well vastly exceeds the maximum drift’s saturation velocity in the bulk material.
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页码：1177 / 1181
页数：4
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