Effects of electric and magnetic fields on electrons in a GaAs quantum box

被引：1
|
作者：
Chakraborty, C [1 ]
Lai, PT [1 ]
机构：
[1] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Peoples R China
来源：
2000 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS | 2000年
关键词：
D O I：
10.1109/HKEDM.2000.904221
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An attempt is made to investigate theoretically the effect of electric and magnetic fields on an n-GaAs semiconductor quantum hox. The magnitude of energy shift due to the electric or magnetic field increases with the field strength. The shift is also more pronounced for larger box dimensions.
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页码：82 / 85
页数：4
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