Influence of gallium arsenide surface treatment in selenium vapors on subsurface defects

被引：0
|
作者：
N. N. Bezryadin
G. I. Kotov
Yu. N. Vlasov
A. A. Starodubtsev
P. K. Bhatnagar
P. C. Mathur
机构：
[1] Voronezh State Technological Academy,
[2] University of Delhi,undefined
来源：
Russian Physics Journal | 2009年 / 52卷
关键词：
gallium arsenide; selenium; Schottky diode; fastening of the Fermi energy level; surface electron states; defects; subsurface region; atomic defect structure;
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摘要：
Influence of GaAs surface treatment in selenium vapors on the parameters of electronic states in the subsurface GaAs regions is investigated by the methods of volt-ampere and volt-farad characteristics and isothermal capacitance relaxation at temperatures in the interval 77–400 K. Electrophysical measurements of the Schottky barriers formed on the GaAs surface treated in selenium indicate a decrease in the surface electron state (SES) density and unfastening of the Fermi energy level. In this case, generation of subsurface defects is observed that causes compensation of shallow donors and refastening of the Fermi energy level typical of some structures.
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页码：411 / 416
页数：5
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