Modeling and Analysis of a Front High-k gate stack Dual-Material Tri-gate Schottky Barrier Silicon-on-Insulator MOSFET with a Dual-Material Bottom Gate

被引：0
|
作者：
Pritha Banerjee
Subir Kumar Sarkar
机构：
[1] Jadavpur University,Department of Electronics & Telecommunication Engineering
来源：
Silicon | 2019年 / 11卷
关键词：
Schottky barrier MOSFET; Tri-gate MOSFETs; Silicon-on-insulator/nothing (SOI/SON); Short channel effects;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The present work centralizes the analytical modeling of a novel structure namely front high-k gate stack Dual-Material Tri-gate Silicon-on-insulator Schottky barrier MOSFET with a dual material bottom gate along with an emphasis on its response towards the various SCEs. 3-D Poisson’s equation along with proper boundary conditions has been solved considering the popular parabolic potential approximation. Different device features like surface potential, threshold voltage, electric field has been studied. Also the device immunity towards the several Short channel effects like drain-induced barrier lowering, threshold voltage roll-off, hot carrier effects are investigated minutely. The analytical results obtained have been verified using simulation results obtained from ATLAS.
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收藏
页码：513 / 519
页数：6
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