Influence of the magnetic field on bandgap and chemical composition of zinc thin films prepared by sparking discharge process

被引:0
|
作者
Stefan Ručman
Panich Intra
E. Kantarak
W. Sroila
T. Kumpika
J. Jakmunee
W. Punyodom
Biljana Arsić
Pisith Singjai
机构
[1] Chiang Mai University,Material Science Research Center, Faculty of Science
[2] Rajamangala University of Technology Lanna,Research Unit of Applied Electric Field in Engineering (RUEE), College of Integrated Science and Technology
[3] Chiang Mai University,Department of Physics and Material Science, Faculty of Science
[4] Chiang Mai University,Department of Chemistry, Faculty of Science
[5] Chiang Mai University,Center of Excellence in Material Science and Technology
[6] University of Nis,Department of Mathematics, Faculty of Sciences and Mathematics
来源
关键词
D O I
暂无
中图分类号
学科分类号
摘要
We examine the influence of the magnetic field on the chemical reaction of nitrogen and carbon dioxide in sparking electric discharge of zinc wires. Samples are prepared on Indium Tin Oxide (ITO) and quartz substrates in the form of thin films at 0 T, 0.2 T and 0.4 T. Different chemical composition of thin-films prepared by sparking discharge was obtained and verified by XPS, Raman and Cyclic voltammetry. Carbon dioxide conversion to carbonates was observed for zinc sparked in CO2 and nitrogen affecting crystallization of thin films was confirmed by XRD. Synthesis route for thin-film preparation used in this study is electric sparking discharge, convenient for fast ionization of metal and gasses. Band gap energy of thin films prepared by this method was starting from 2.81 eV and 4.24 eV, with the lowest band gaps prepared on ITO in 0.4 T. Differential Mobility Analysis (DMA) indicates smaller particles are fabricated by discharging zinc wires in a higher magnetic field. Nitridification of zinc nanoparticles occurred on 0.2 Tesla magnetic field strength and it was detectable even after XPS ion gun etching. Carbonation and nitridification of zinc thin films by sparking wires inside the magnetic field to observe the effect of the magnetic field on bandgap and chemical composition are confirmed by XPS.
引用
收藏
相关论文
共 50 条
  • [31] Influence of external magnetic field on properties of aluminum-doped zinc oxide films prepared by RF magnetron sputtering
    Chen Ming
    Zhou Xi-Ying
    Mao Xiu-Juan
    Shao Jia-Jia
    Yang Guo-Liang
    ACTA PHYSICA SINICA, 2014, 63 (09)
  • [32] A statistical method to optimize the chemical etching process of zinc oxide thin films
    Lynes, David D.
    Chandrahalim, Hengky
    Brown, Justin M.
    Singh, Karanvir
    Bodily, Kyle T.
    Leedy, Kevin D.
    ROYAL SOCIETY OPEN SCIENCE, 2022, 9 (08):
  • [33] Transparent conducting thin films prepared by pulsed laser deposition in magnetic field
    Suzuki, Akio
    Yoneyama, Yoshitaka
    Aoki, Takanori
    Matsushita, Tatsuhiko
    Okuda, Masahiro
    Shinku/Journal of the Vacuum Society of Japan, 2000, 43 (05) : 611 - 615
  • [34] Composition control of barium strontium titanate thin films prepared by chemical vapor deposition
    Kiyotoshi, M
    Eguchi, K
    Imai, K
    Arikado, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (08): : 4487 - 4492
  • [35] ZINC-OXIDE THIN-FILMS PREPARED BY CHEMICAL VAPOR-DEPOSITION FROM ZINC ACETATE
    MARUYAMA, T
    SHIONOYA, J
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1992, 11 (03) : 170 - 172
  • [36] Influence of thickness and magnetic field on magnetic ordering temperatures in holmium thin films
    Dudas, J.
    Gabani, S.
    Goscianska, I.
    Kavecansky, V.
    Vincze, A.
    Guzan, M.
    Konc, M.
    ACTA PHYSICA POLONICA A, 2008, 113 (01) : 191 - 195
  • [37] The influence of external magnetic field on the structural and optical properties of nanocrystalline ZnO thin films prepared by dip coating method
    AlArfaj, Esam
    Subahi, Ahmad
    SUPERLATTICES AND MICROSTRUCTURES, 2015, 86 : 508 - 517
  • [38] INFLUENCE OF MAGNETIC-FIELD STRENGTH AND CHEMICAL-COMPOSITION ON PROPERTIES OF GDXCO1-X FILMS
    DEMCHENKO, AI
    SUKHVALO, SV
    KUZMICHEV, SV
    ROMANOV, IM
    SHIFRIN, AB
    FIZIKA METALLOV I METALLOVEDENIE, 1980, 50 (02): : 308 - 314
  • [39] High dielectric constant of SrTiO3 thin films prepared by chemical process
    Pontes, FM
    Lee, EJH
    Leite, ER
    Longo, E
    Varela, JA
    JOURNAL OF MATERIALS SCIENCE, 2000, 35 (19) : 4783 - 4787
  • [40] High dielectric constant of SrTiO3 thin films prepared by chemical process
    F. M. Pontes
    E. J. H. Lee
    E. R. Leite
    E. Longo
    J. A. Varela
    Journal of Materials Science, 2000, 35 : 4783 - 4787