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Non-volatile SRAM memory cells based on ReRAM technology

被引：0
|
作者：
Hussein Bazzi
Adnan Harb
Hassen Aziza
Mathieu Moreau
机构：
[1] Lebanese International University,Department of Electrical and Electronics Engineering
[2] Aix-Marseille University,IM2NP
[3] International University of Beirut,UMR CNRS 7334
来源：
SN Applied Sciences | 2020年 / 2卷
关键词：
1T1R ReRAM; Static Random-Access Memory (SRAM); Non-volatile Static Random-Access Memory (nvSRAM); Power consumption;
D O I：
暂无
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学科分类号：
摘要：
Static Random-Access Memories (SRAMs) are very common in today’s chip industry due to their speed and power consumption but are classified as volatile memories. Non-volatile SRAMs (nvSRAMs) combine SRAM features with non-volatility. This combination has the advantage to retain data after power off or in the case of power failure, enabling energy-efficient and reliable systems under frequent power-off conditions. In this work, several nvSRAMs architectures based on Oxide Random-Access Memory (OxRAM) technology are presented and compared. OxRAMs are non-volatile memories considered as a subset of Resistive RAM (ReRAM) technology.
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