Structural, optical, and electrical properties of pulsed laser deposition CIGSS thin films

High-quality CuIn0.75Ga0.25(Se0.75S0.25)2 (CIGSS) thin films were synthesized on the soda-lime glass (SLG) substrates by pulsed laser deposition. The structural and optical properties of CIGSS thin films were studied by experiments and theoretical calculations. XRD result reveals that the films are of chalcopyrite structure. The experiments and theory show that CIGSS is a semiconductor with a direct band gap. The direct band gap energy of the deposited CIGSS thin films are in the solar energy range. The band structure and density of states of the CIGSS crystals were studied by the first principles density functional theory. The experimental data and theoretical data have demonstrated good agreement.