Electrical, structural, and optical properties of ITO thin films prepared at room temperature by pulsed laser deposition

被引：106
|
作者：
Kim, Jong Hoon [1 ]
Jeon, Kyung Ah [1 ]
Kim, Gun Hee [1 ]
Lee, Sang Yeol [1 ]
机构：
[1] Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea
来源：
APPLIED SURFACE SCIENCE | 2006年 / 252卷 / 13期
关键词：
transparent conducting oxide (TCO); indium tin oxide (ITO); pulsed laser deposition (PLD); rapid thermal annealing (RTA);
D O I：
10.1016/j.apsusc.2005.07.134
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Indium tin oxide (ITO) thin films were prepared by pulsed laser deposition (PLD) on glass substrate at room temperature. Structural, optical, and electrical properties of these films were analyzed in order to investigate its dependence on oxygen pressure, and rapid thermal annealing (RTA) temperature. High quality ITO films with a low resistivity of 3.3 x 10(-4) Omega cm and a transparency above 90% were able to be formed at an oxygen pressure of 2.0 Pa and an RTA temperature of 400 degrees C. A four-point probe method, X-ray diffraction (XRD), atomic force microscopy (AFM), and UV-NIR grating spectrometer are used to investigate the properties of ITO films. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：4834 / 4837
页数：4
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