Flexible IGZO thin-film transistors and inverter circuits with diode-connected transistors fabricated on transparent polyimide substrates

Amorphous In2O3–Ga2O3–ZnO (a-IGZO) thin-film-transistors (TFTs) have attracted increasing attention in recent years due to their potential on flexible electronics applications. We investigated low-temperature-processed a-IGZO TFTs and inverters on transparent polyimide. We had successfully implemented flexible top-gate staggered a-IGZO TFTs and inverter circuits on transparent polyimide-based nanocomposite substrates using fully lithographic, etching and PECVD processes that are compatible with existing TFT mass fabrication technologies. The TFTs showed decent performances (with mobility > 20 cm2/V s) as de-bonded from the carrier glass. Furthermore, the IGZO-based inverter also showed decent performances (voltage gain > 1.5) and is considered as a potential pathway toward flexible electronics.