Feature length-scale modeling of LPCVD and PECVD MEMS fabrication processes

被引:0
|
作者
Lawrence C. Musson
Pauline Ho
Steven J. Plimpton
Rodney C. Schmidt
机构
[1] Sandia National Laboratories,
[2] Reaction Design Inc.,undefined
来源
Microsystem Technologies | 2005年 / 12卷
关键词
MEMS; CVD; LPCVD; PECVD; Level-set method; Feature scale;
D O I
暂无
中图分类号
学科分类号
摘要
The surface micromachining processes used to manufacture MEMS devices and integrated circuits transpire at such small length scales and are sufficiently complex that a theoretical analysis of them is particularly inviting. Under development at Sandia National Laboratories (SNL) is Chemically Induced Surface Evolution with Level Sets (ChISELS), a level-set based feature-scale modeler of such processes. The theoretical models used, a description of the software and some example results are presented here. The focus to date has been of low-pressure and plasma enhanced chemical vapor deposition (low-pressure chemical vapor deposition, LPCVD and PECVD) processes. Both are employed in SNLs SUMMiT V technology. Examples of step coverage of SiO2 into a trench by each of the LPCVD and PECVD process are presented.
引用
收藏
页码:137 / 142
页数:5
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