Alloy compositional fluctuation in InAlGaN epitaxial films

被引：0
|
作者：
D.-B. Li
X. Dong
J. Huang
X. Liu
Z. Xu
Z. Zhang
Z. Wang
机构：
[1] Chinese Academy of Sciences,Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors
[2] Chinese Academy of Sciences,State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors
[3] Chinese Academy of Sciences,Beijing Laboratory of Electron Microscopy, Institute of Physics
来源：
Applied Physics A | 2005年 / 80卷
关键词：
Microscopy; Electron Microscopy; Thin Film; Operating Procedure; Electronic Material;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The quaternary InAlGaN films were grown by metal-organic vapor phase epitaxy (MOVPE) at various temperatures and the optical and structural properties of the quaternary films were investigated by temperature-dependent photoluminescence (PL), high-resolution X-ray diffraction (HRXRD) and high-resolution electron microscopy (HREM). The results show that the temperature-dependent PL intensity of the InAlGaN film is similar to that of the disordered alloys, which is thought to be due to local alloy compositional fluctuations (ACF) in the epilayer. HRXRD measurement reveals there are In-rich and In-poor phases in the film and HREM observation, on the other hand, demonstrates that nanoclusters formed in the epilayer. Therefore the experimental results support the existence of ACF in the epilayers.
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页码：649 / 652
页数：3
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