Optical quenching behavior related to the deep levels in unintentionally doped n-type GaN epilayers grown on sapphire substrates

被引：0
|
作者：
N. H. Kim
T. W. Kang
T. W. Kim
机构：
[1] Dongguk University,Quantum
[2] Division of Electrical and Computer Engineering,Functional Semiconductor Research Center
[3] Hanyang University,Advanced Semiconductor Research Center
来源：
Journal of Materials Science | 2004年 / 39卷
关键词：
Polymer; Sapphire; Material Processing; Deep Level; Sapphire Substrate;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
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页码：6343 / 6345
页数：2
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