Interface reconstruction in the Ga2Se3/GaAs(100) and In2Se3/InAs(100) nanoheterostructures

被引：0
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作者：
N. N. Bezryadin
G. I. Kotov
S. V. Kuzubov
Ya. A. Boldyreva
B. L. Agapov
机构：
[1] Voronezh State Technological Academy,
来源：
Crystallography Reports | 2011年 / 56卷
关键词：
Selenium; GaAs; Crystallography Report; Reflection High Energy Electron Diffraction; Selenium Atom;
D O I：
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摘要：
The surface of GaAs(100) and InAs(100) substrates thermally treated in selenium vapor has been investigated by transmission electron microscopy (TEM) and reflection high-energy electron diffraction. Transmission electron microscopy and high-energy electron diffraction data on these heterostructures confirms the epitaxial pseudomorphic growth of the gallium selenide Ga2Se3(100) and indium selenide In2Se3(100) phases with ordered stoichiometric cation vacancies. A model of the atomic structure of the Ga2Se3(100) and In2Se3(100) surfaces is proposed, and the 2 × 2 reconstruction of the GaAs(100) and InAs(100) surfaces after treatment in selenium vapor is discussed within this model.
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