Electron microscopy investigation of GaAs(100)-(Ga2Se3)-GaAs nanostructures

被引：0
|
作者：
B. L. Agapov
N. N. Bezryadin
Yu. V. Synorov
G. I. Kotov
E. A. Tatokhin
A. A. Starodubtsev
S. V. Kuzubov
机构：
[1] GOU VPO Voronezh State Technological Academy,
来源：
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques | 2007年 / 1卷
关键词：
GaAs; Electron Diffraction Pattern; Neutron Technique; Gallium Arsenide; Scanning Electron Micro;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The GaAs(100)-Ga2Se3 heterostructures have been investigated by transmission and scanning electron microscopy. The sequence of structural transformations at the GaAs(100) surface during treatment in selenium vapor has been determined. It has been found that the preliminary treatment of the GaAs(100) surface in selenium vapor increases the orienting effect of the GaAs(100) substrate on the GaAs film growth.
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页码：750 / 753
页数：3
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