Temperature dependent optical properties of single, hierarchically self-assembled GaAs/AlGaAs quantum dots

被引：0
|
作者：
M Benyoucef
A Rastelli
OG Schmidt
SM Ulrich
P Michler
机构：
[1] Max-Planck-Institut für Festkörperforschung,5. Physikalisches Institut
[2] Universität Stuttgart,undefined
来源：
Nanoscale Research Letters | / 1卷
关键词：
GaAs quantum dots; Hierarchical selfassembly; Single dot spectroscopy; Room temperature luminescence; Photon correlation; 42.50.Ar; 78.55.Cr; 78.67.Hc;
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摘要：
We report on the experimental observation of bright photoluminescence emission at room temperature from single unstrained GaAs quantum dots (QDs). The linewidth of a single-QD ground-state emission (≈ 8.5 meV) is comparable to the ensemble inhomogeneous broadening (≈ 12.4 meV). At low temperature (T ≤ 40 K) photon correlation measurements under continuous wave excitation show nearly perfect single-photon emission from a single GaAs QD and reveal the single photon nature of the emitted light up to 77 K. The QD emission energies, homogeneous linewidths and the thermally activated behavior as a function of temperature are discussed.
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