Thermal expansion and heat capacity of GaAs and InAs

被引：0
|
作者：
V. M. Glazov
A. S. Pashinkin
机构：
[1] Technical University,Moscow State Institute of Electronic Engineering
来源：
Inorganic Materials | 2000年 / 36卷
关键词：
Differential Scanning Calorimetry; Heat Capacity; GaAs; GaSb; Debye Temperature;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Thermal expansion of GaAs and InAs was measured in the temperature ranges from 396 to 1149 and from 441 to 1206 K, respectively. The thermal-expansion coefficients, Debye temperatures, and root-meansquare atomic displacements were calculated. These parameters were found to depend on the root-mean-square atomic weights of the compounds. Based on the published data and our heat capacity measurements on GaAs and InAs, the coefficients appearing in the equation for the temperature dependence of heat capacity in the temperature ranges from 200 K to the melting points of GaAs and InAs were determined
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页码：225 / 231
页数：6
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