Fabrication of pentacene organic field-effect transistors with polyimide gate dielectric layer

被引：0

作者：

Dong M.-J. ^{[1
]}

Tao C.-L. ^{[1
]}

Zhang X.-H. ^{[1
]}

Ou G.-P. ^{[1
,2
]}

Zhang F.-J. ^{[1
]}

机构：

[1] School of Physical Science and Technology, Lanzhou University

[2] School of Physics, Human University of Science and Technology

来源：

Optoelectronics Letters | 2007年 / 3卷 / 6期

基金：

中国国家自然科学基金;

关键词：

TN325.3; TN386.2;

D O I：

10.1007/s11801-007-7053-8

中图分类号：

学科分类号：

摘要：

The organic field effect transistors had been fabricated using the pentacene by vacuum evaporation as the active layer, the polyimide by spin coating as insulator layer, and aluminum by vacuum evaporation as gate, source and drain electrodes respectively. The field-effect mobility of 0.079 cm 2/V.s was tested at V ds=70 V, and on/off radio up to 1.7×104. © 2007 Tianjin University of Technology.

引用

页码：432 / 434

页数：2

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