Structural, photoelectrical characterization of Cu(InAl)Se2 thin films and the fabrication of Cu(InAl)Se2 based solar cells

Films of Cu(InAl)Se2 were deposited onto glass substrates by SILAR (successive ionic layer adsorption and reaction) method. All the deposited films were found to be polycrystalline in nature exhibiting the chalcopyrite structure with the crystallite orientation along (112), (220/204) and (116/312) directions. The photocurrent was found to increase with increase in film thickness and also with increase of light intensity. Photocurrent spectra showed a peak related to the band-to-band transition. The spectral response of Cu(InAl)Se2 thin films was studied by allowing the radiation to pass through a series of interference filters in the wavelength range 300 to 1200 nm. Films of higher thickness exhibited higher photosensitivity while lower thickness films exhibited moderate photosensitivity. Cu(InAl)Se2-based solar cells with different types of buffer layers such as CdS, CdS:Cu, CdS:In were fabricated. The current and voltage were measured using an optical power meter and an electrometer and the fabricated solar cells were illuminated using 100 mW/cm2 white light under AM1 conditions.