A laboratory setup for obtaining silicon carbide films by the direct ion deposition method

A laboratory setup for direct ion deposition intended for obtaining silicon carbide films under the conditions of the condensation of carbon and silicon ions with energies of ≥100 eV is described. The setup contains an original vacuum-arc source of carbon-silicon plasma with an extended cathode and an inhomogeneous magnetic field. The design features of the plasma source, the main technological characteristics of the setup, and the regimes of deposition of nanocrystalline silicon carbide films are presented.