Study of transient photoconductivity of GaN epilayer grown by metalorganic chemical vapor deposition

被引：0
|
作者：
Z.Z. Chen
B. Shen
X.Y. Zhang
R. Zhang
P. Chen
Y.G. Zhou
L. Zang
R.L. Jiang
Z.C. Huang
Y.D. Zheng
Z.S. Wu
X.T. Sun
F. Chen
机构：
[1] Department of Physics and Laboratory of Solid State Microstructures,
[2] Nanjing University,undefined
[3] Nanjing 210093,undefined
[4] P.R. China,undefined
[5] Department of Electronic Engineering,undefined
[6] Nanjing University,undefined
[7] Nanjing 210093,undefined
[8] P.R. China,undefined
来源：
Applied Physics A | 1998年 / 67卷
关键词：
PACS: 71.55.E; 72.40;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：567 / 570
页数：3
相关论文
共 50 条
  • [1] Study of transient photoconductivity of GaN epilayer grown by metalorganic chemical vapor deposition
    Nanjing Univ, Nanjing, China
    International Conference on Solid-State and Integrated Circuit Technology Proceedings, 1998, : 673 - 676
  • [2] Study of transient photoconductivity of GaN epilayer grown by metalorganic chemical vapor deposition
    Chen, ZZ
    Shen, B
    Zhang, XY
    Zhang, R
    Chen, P
    Zhou, YG
    Zang, L
    Jiang, RL
    Zheng, YD
    Wu, ZS
    Sun, XT
    Chen, F
    1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, 1998, : 673 - 676
  • [3] Study of transient photoconductivity of GaN epilayer grown by metalorganic chemical vapor deposition
    Chen, ZZ
    Shen, B
    Zhang, XY
    Zhang, R
    Chen, P
    Zhou, YG
    Zang, L
    Jiang, RL
    Huang, ZC
    Zheng, YD
    Wu, ZS
    Sun, XT
    Chen, F
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 67 (05): : 567 - 570
  • [4] Optical study of GaN epilayer grown by metalorganic chemical vapor deposition and pulsed laser deposition
    Premchander, P
    Manoravi, P
    Joseph, M
    Baskar, K
    JOURNAL OF CRYSTAL GROWTH, 2005, 273 (3-4) : 363 - 367
  • [5] Effect of V-Pits on the Property of GaN Epilayer Grown by Metalorganic Chemical Vapor Deposition
    Fu, Ying Hao
    Sun, Xiaojuan
    Ben, Jianwei
    Jiang, Ke
    Jia, Yuping
    Liu, Henan
    Li, Zhiming
    Li, Dabing
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 18 (11) : 7527 - 7531
  • [6] Metalorganic chemical vapor deposition growth of a GaN epilayer on an annealed GaN buffer layer
    Degave, E
    Ruterana, P
    Nouet, G
    Je, JH
    Kim, CC
    INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, 2002, : 546 - 549
  • [7] Study of carbon concentration in GaN grown by metalorganic chemical vapor deposition
    Piao, Guanxi
    Ikenaga, Kazutada
    Yano, Yoshiki
    Tokunaga, Hiroki
    Mishima, Akira
    Ban, Yuzaburo
    Tabuchi, Toshiya
    Matsumoto, Koh
    JOURNAL OF CRYSTAL GROWTH, 2016, 456 : 137 - 139
  • [8] Photoreflectance study of GaN film grown by metalorganic chemical vapor deposition
    Yang, K
    Zhang, R
    Zheng, YD
    Qin, LH
    Shen, B
    Shi, HT
    Huang, ZC
    Chen, JC
    III-NITRIDE, SIC AND DIAMOND MATERIALS FOR ELECTRONIC DEVICES, 1996, 423 : 735 - 739
  • [9] GaN homoepitaxial layers grown by metalorganic chemical vapor deposition
    Leszczynski, M
    Beaumont, B
    Frayssinet, E
    Knap, W
    Prystawko, P
    Suski, T
    Grzegory, I
    Porowski, S
    APPLIED PHYSICS LETTERS, 1999, 75 (09) : 1276 - 1278
  • [10] Time-resolved photoluminescence study of GaN grown by metalorganic chemical vapor deposition
    Ki Kwon, Ho
    Eiting, C.J.
    Lambert, D.J.H.
    Wong, M.M.
    Shelton, B.S.
    Zhu, T.G.
    Liliental-Weber, Z.
    Benamura, M.
    Dupuis, R.D.
    Journal of Crystal Growth, 2000, 221 (1-4) : 240 - 245
12345