Effect of microwave irradiation on the photoluminescence of bound excitons in CdTe:Cl single crystals

被引:0
|
作者
D. V. Korbutyak
A. P. Lotsko
N. D. Vakhnyak
L. A. Demchuna
R. V. Konakova
V. V. Milenin
R. A. Red’ko
机构
[1] National Academy of Sciences of Ukraine,Lashkaryov Institute of Semiconductor Physics
来源
Semiconductors | 2011年 / 45卷
关键词
Microwave Irradiation; Microwave Treatment; Photoluminescence Intensity; Nonequilibrium Charge Carrier; Local Atomic Configuration;
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学科分类号
摘要
The effect of microwave radiation on the transformation of impurity-based structural complexes in CdTe:Cl single crystals is studied using low-temperature photoluminescence measurements. It is shown that microwave radiation activates ClTe centers, resulting in an increase in the intensity of photoluminescence line of excitons bound at the corresponding ClTe donor centers. A nonmonotonic dependence of the integrated photoluminescence intensity on the duration of microwave irradiation is observed. At the initial stage of microwave irradiation (t = 30 s), an increase in the integrated excitonic photoluminescence intensity is observed; as the duration of microwave irradiation is increased, the photoluminescence intensity decreases. The experimentally observed variations in the photoluminescence intensity are athermal in nature. The hypothetical mechanism of transformation of impurity-based structural complexes is described.
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页码:1133 / 1139
页数:6
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