Photoluminescence spectra of Cl-doped CdTe crystals

被引:56
|
作者
Shin, HY [1 ]
Sun, CY
机构
[1] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei 106, Taiwan
[2] Inst Nucl Energy Res, Lungtan 325, Taiwan
关键词
D O I
10.1016/S0022-0248(97)00539-3
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
A detailed analysis of photoluminescence (PL) spectra has been done to identify the origins of PL emissions in solution-grown CI-doped CdTe crystals. In the exciton emission region, a sharp peak at 1.590 eV and a broad peak at 1.586 eV are observed in the Cl-doped CdTe crystals and their intensities are enhanced with increasing amount of Cl. On the basis of the temperature-dependence measurements: the two features are attributed to the recombination of excitons bound to two different accepters. From the variations in the PL spectra of the Cl-doped CdTe crystals before and after Cd annealing, it is demonstrated that the feature at 1.590 eV is associated to exciton bound to complex acceptor formed with a Cd vacancy and two Cl donors (V-Cd-2Cl(Te)), and the feature at 1.586 eV is associated to exciton bound to another Cl-related complex acceptor of(V-Cd-Cl-Te). The ionization energies for (V-Cd-2Cl(Te)) and (V-Cd-Cl-Te) complex acceptors are found to be about 45 and 120 meV, respectively. (C) 1998 Published by Elsevier Science B.V. All rights reserved.
引用
收藏
页码:354 / 361
页数:8
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