Laser-Induced Luminescence upon IR Multiphoton Excitation of Triethylsilane

A comparative study of the effect of IR laser radiation frequency on the yield of secondary reactions and luminescence intensity as functions of the laser pulse energy upon IR multiphoton dissociation of triethylsilane was performed. It was found that the reaction and luminescence threshold energies symbatically increase on passing from a frequency of 985 to 944 cm–1. Based on experiments with xenon admixture to triethylsilane, it was concluded that the diethylsilyl radical, the product of the primary reaction of C–Si bond dissociation, plays the major role in the reactions of formation of luminescent species.