Complementary Metal-Oxide Semiconductor (CMOS) Image Sensor: An Insight as a Point-of-Care Label-Free Immunosensor

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作者
Karthikeyan Kandasamy
Mohana Marimuthu
Gun Yong Sung
Chang Geun Ahn
Sanghyo Kim
机构
[1] Kyungwon University,College of Bionanotechnology
[2] Electronics and Telecommunications Research Institute (ETRI),BT Convergence Technology Research Department
来源
Analytical Sciences | 2010年 / 26卷
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摘要
The present paper examines the efficiency of a complementary metal-oxide semiconductor (CMOS) using an indium nanoparticle (InNP) substrate for the high-sensitivity detection of antigen/antibody interactions at concentrations as low as 100 pg/ml under normal light. Metal NPs coated with antigen/antibody layers act as a dielectric layer on the conducting sphere, which enhances the number of photons hitting the sensor surface through a light-scattering effect. This photon number is proportional to the digital number observed with the CMOS sensor for detecting antigen/antibody interactions.
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页码:1215 / 1217
页数:2
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