Effect of Carrier Heating by the GaAs Picosecond Stimulated Emission on Duration of Emission

被引：0

作者：

N. N. Ageeva

I. L. Bronevoi

D. N. Zabegaev

A. N. Krivonosov

机构：

[1] Kotel’nikov Institute of Radio Engineering and Electronics,

[2] Russian Academy of Sciences,undefined

来源：

Semiconductors | 2021年 / 55卷

关键词：

stimulated picosecond emission; duration of picosecond emission; carrier heating by emission; carrier cooling time; energy transport of carriers; band-gap renormalization; picosecond dynamics of emission;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：154 / 161

页数：7

共 50 条

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