Effect of Carrier Heating by the GaAs Picosecond Stimulated Emission on Duration of Emission

被引：0
|
作者：
N. N. Ageeva
I. L. Bronevoi
D. N. Zabegaev
A. N. Krivonosov
机构：
[1] Kotel’nikov Institute of Radio Engineering and Electronics,
[2] Russian Academy of Sciences,undefined
来源：
Semiconductors | 2021年 / 55卷
关键词：
stimulated picosecond emission; duration of picosecond emission; carrier heating by emission; carrier cooling time; energy transport of carriers; band-gap renormalization; picosecond dynamics of emission;
D O I：
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学科分类号：
摘要：
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页码：154 / 161
页数：7
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