Field-effect transistor based on ZnO:Li films

被引：0
|
作者：
R. B. Hovsepyan
N. R. Aghamalyan
S. I. Petrosyan
机构：
[1] NAS of Armenia,Institute of Physical Research
来源：
Journal of Contemporary Physics (Armenian Academy of Sciences) | 2010年 / 45卷
关键词：
ZnO:Li film; field-effect transistor; photoelectric characteristics;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Field-effect transistors with n- and p-types of the channel on the base of ZnO:Li oxide films and MgF2 fluoride film as a gate insulator were prepared. The field effect as well as the UV radiation influence on the field effect in ZnO:Li thin films were investigated. Photoelectric characteristics of the obtained thin-film field-effect transistors were studied. A mechanism of photoelectric amplification in the obtained transistors is proposed.
引用
收藏
页码：262 / 268
页数：6
相关论文
共 50 条
  • [11] Transverse piezoelectric field-effect transistor based on single ZnO nanobelts
    Yang, Ya
    Qi, Junjie
    Guo, Wen
    Gu, Yousong
    Huang, Yunhua
    Zhang, Yue
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2010, 12 (39) : 12415 - 12419
  • [12] Memory element based on ferroelectric field-effect transistor with use of ZnO:Li/LaB6 heterostructures
    Aghamalyan, N. R.
    Aslanyan, T. A.
    Vardanyan, E. S.
    Kafadaryan, E. A.
    Hovsepyan, R. K.
    Petrosyan, S. I.
    Poghosyan, A. R.
    JOURNAL OF CONTEMPORARY PHYSICS-ARMENIAN ACADEMY OF SCIENCES, 2013, 48 (03) : 128 - 133
  • [13] Memory element based on ferroelectric field-effect transistor with use of ZnO:Li/LaB6 heterostructures
    N. R. Aghamalyan
    T. A. Aslanyan
    E. S. Vardanyan
    E. A. Kafadaryan
    R. K. Hovsepyan
    S. I. Petrosyan
    A. R. Poghosyan
    Journal of Contemporary Physics (Armenian Academy of Sciences), 2013, 48 : 128 - 133
  • [14] Chemical sensing with ZnO nanowire field-effect transistor
    Fan, Zhiyong
    Lu, Jia G.
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2006, 5 (04) : 393 - 396
  • [15] The research on suspended ZnO nanowire field-effect transistor
    黎明
    张海英
    郭常新
    徐静波
    付晓君
    Chinese Physics B, 2009, 18 (04) : 1594 - 1597
  • [16] The research on suspended ZnO nanowire field-effect transistor
    Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
    不详
    Chin. Phys., 2009, 4 (1594-1597):
  • [17] The research on suspended ZnO nanowire field-effect transistor
    Li Ming
    Zhang Hai-Ying
    Guo Chang-Xin
    Xu Jing-Bo
    Fu Xiao-Jun
    CHINESE PHYSICS B, 2009, 18 (04) : 1594 - 1597
  • [18] ZnO nanofiber field-effect transistor assembled by electrospinning
    Wu, Hui
    Lin, Dandan
    Zhang, Rui
    Pan, Wei
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2008, 91 (02) : 656 - 659
  • [19] Hydrothermally Processed Photosensitive Field-Effect Transistor Based on ZnO Nanorod Networks
    Ashish Kumar
    Kshitij Bhargava
    Tejendra Dixit
    I. A. Palani
    Vipul Singh
    Journal of Electronic Materials, 2016, 45 : 5606 - 5611
  • [20] ZnO nanorods array based field-effect transistor biosensor for phosphate detection
    Ahmad, Rafiq
    Ahn, Min-Sang
    Hahn, Yoon-Bong
    JOURNAL OF COLLOID AND INTERFACE SCIENCE, 2017, 498 : 292 - 297
12345