Field-effect transistor based on ZnO:Li films

被引：0
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作者：
R. B. Hovsepyan
N. R. Aghamalyan
S. I. Petrosyan
机构：
[1] NAS of Armenia,Institute of Physical Research
来源：
Journal of Contemporary Physics (Armenian Academy of Sciences) | 2010年 / 45卷
关键词：
ZnO:Li film; field-effect transistor; photoelectric characteristics;
D O I：
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学科分类号：
摘要：
Field-effect transistors with n- and p-types of the channel on the base of ZnO:Li oxide films and MgF2 fluoride film as a gate insulator were prepared. The field effect as well as the UV radiation influence on the field effect in ZnO:Li thin films were investigated. Photoelectric characteristics of the obtained thin-film field-effect transistors were studied. A mechanism of photoelectric amplification in the obtained transistors is proposed.
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页码：262 / 268
页数：6
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