Doping in metal chalcogenide glasses

被引:0
|
作者
S. A. Girlani
B. Yan
P. C. Taylor
机构
[1] University of Utah,
来源
Semiconductors | 1998年 / 32卷
关键词
Oxygen; Oxygen Concentration; Magnetic Material; Metal Atom; Electromagnetism;
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学科分类号
摘要
Chalcogenide glasses that contain sufficient concentrations of metal atoms can be p-type doped. This doping results in part because the local structural order is tetrahedral at the metal and the chalcogen sites in these glasses. At concentrations exceeding 1019 cm−3, oxygen promotes doping by increasing the densities of dangling-bond defects at threefold-coordinated chalcogens, which are the doping sites in these glasses. For oxygen concentrations below 1019 cm−3, the conductivity is independent of oxygen, and therefore is controlled by other mechanisms. The compositions Cu6As4S9 and Cu6As4Se9 are studied, because at these compositions the S (or Se) and Cu atoms are all tetrahedrally coordinated and there exist only Cu-S and As-S (or Cu-Se and As-Se) bonds.
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页码:879 / 883
页数:4
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