Nanoscale Single-Crystal Silicon Carbide on Silicon and Unique Properties of This Material

被引：0
|
作者：
S. A. Kukushkin
A. V. Osipov
机构：
[1] Institute for Problems of Mechanical Engineering,
[2] Russian Academy of Sciences,undefined
来源：
Inorganic Materials | 2021年 / 57卷
关键词：
silicon carbide on silicon; silicon carbide; heterostructures; epitaxial films; heterogeneous reactions; substitution reactions; wide-gap semiconductors;
D O I：
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学科分类号：
摘要：
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页码：1319 / 1339
页数：20
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