Microchannel avalanche photodetector based on a Si-SiO2 structure

被引：0
|
作者：
M. A. Musaev
机构：
[1] Azerbaijan State Petroleum Academy,
来源：
Technical Physics Letters | 2002年 / 28卷
关键词：
Considerable Increase; Breakdown Voltage; Technological Characteristic; Amplification Coefficient; Avalanche Process;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A new avalanche photodetector is developed and realized on the basis of a Si-SiO2 microchannel structure. The new device is analogous to the well-known vacuum microchannel plates but possesses better technological characteristics. A considerable increase in the photocurrent amplification coefficient is achieved due to decreased fluctuations of the semiconductor breakdown voltage and suppressed local avalanche processes in inhomogeneities of the semiconductor responsible for the microplasma breakdown.
引用
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页码：907 / 909
页数：2
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