Effect of free electron-hole pairs on the saturation of excitonic absorption in GaAs/AlGaAs quantum wells

被引：0
|
作者：
K. L. Litvinenko
V. G. Lysenko
I. M. Hvam
机构：
[1] Russian Academy of Sciences,Institute for Problems in Microelectronics and Ultrapure Materials Technology
[2] Mikroelektronik Centret,undefined
[3] DTU,undefined
来源：
Physics of the Solid State | 1998年 / 40卷
关键词：
Spectroscopy; State Physics; Absorption Spectrum; GaAs; Experimental Method;
D O I：
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学科分类号：
摘要：
The pump-probe experimental method is used to investigate the effect of photoexcited carriers on the dynamics of the exciton absorption spectra of GaAs / AlxGa1–xAs-multilayer quantum wells. Use of the method of moment analysis for processing the results makes it possible to identify the simultaneous contribution of changes in oscillator strength and width of the exciton lines in the saturation of exciton absorption. It was found that the oscillator strength recovers its initial value in the course of the first 100–130 ps, whereas broadening and energy-shift of the exciton lines is observed for 700–800 ps. These are the first experimental measurements of the excitation densities at which the oscillator strength of the excitonic state saturates when the latter is perturbed only by free-electron-hole pairs, and when it is perturbed only by other excitons.
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页码：1032 / 1034
页数：2
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