Absolute standard of diffusion length and lifetime of minority charge carriers in single-crystal silicon

被引：0
|
作者：
V. A. Skidanov
机构：
[1] Russian Academy of Sciences,Institute for Design Problems in Microelectronics
来源：
Technical Physics Letters | 2014年 / 40卷
关键词：
Diffusion Length; Technical Physic Letter; Single Crystal Silicon; Gate Oxide; Minority Charge Carrier;
D O I：
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中图分类号：
学科分类号：
摘要：
A substantial difference in electron recombination cross sections on Fe-B complexes (σ1) and on activated iron ions (σ2) in boron-doped single-crystal silicon is used to independently determine the lifetime of electrons in the standard Tst using the surface photo-emf method. Pairs of values of the lifetime T1 and T2 before and after the decomposition of the Fe-B complexes were measured for each of 600 ingots at arbitrary diffusion length Lcal for the calibrating specimen and were placed on the plane (T1, T2). At the boundary of the region filled with the points, ingots are presented that are only contaminated with iron ions, so that T2/T1 = σ1/σ2. The true values of Lst and Tst of the calibrating specimen and the ratio σ1/σ2 = 12.5 ± 0.5 are determined by selecting a new value of the diffusion length for the calibrating specimen, which straightens the boundary of the region filled with the points after the recalculation of the values of T1 and T2.
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页码：957 / 960
页数：3
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