On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates

被引：0
|
作者：
N. V. Baidus
V. Ya. Aleshkin
A. A. Dubinov
Z. F. Krasilnik
K. E. Kudryavtsev
S. M. Nekorkin
A. V. Novikov
A. V. Rykov
D. G. Reunov
M. V. Shaleev
P. A. Yunin
D. V. Yurasov
机构：
[1] Lobachevsky State University of Nizhny Novgorod,
[2] Institute for Physics of Microstructures,undefined
[3] Russian Academy of Sciences,undefined
来源：
Semiconductors | 2018年 / 52卷
关键词：
GaAsP Layers; Heterostructure Lasers; Stimulated Radiation (SR); GaAs Substrate; InGaAs QWs;
D O I：
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学科分类号：
摘要：
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页码：1547 / 1550
页数：3
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  • [1] On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates
    Baidus, N. V.
    Aleshkin, V. Ya.
    Dubinov, A. A.
    Krasilnik, Z. F.
    Kudryavtsev, K. E.
    Nekorkin, S. M.
    Novikov, A. V.
    Rykov, A. V.
    Reunov, D. G.
    Shaleev, M. V.
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    Yurasov, D. V.
    SEMICONDUCTORS, 2018, 52 (12) : 1547 - 1550
  • [2] Application of strained InGaAs/GaAs quantum-well to laser emitting at 1054 nm
    Liu A.
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    Huang M.
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    Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams, 2010, 22 (07): : 1665 - 1667
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