Dislocation-related photoluminescence in silicon implanted with fluorine ions

被引：0
|
作者：
N. A. Sobolev
A. E. Kalyadin
V. I. Sakharov
I. T. Serenkov
E. I. Shek
K. V. Karabeshkin
P. A. Karasev
A. I. Titov
机构：
[1] Russian Academy of Sciences,Ioffe Physical Technical Institute
[2] Peter the Great St. Petersburg Polytechnic University,undefined
来源：
Technical Physics Letters | 2017年 / 43卷
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摘要：
The implantation of 85-keV fluorine ions at a dose of 8.3 × 1014 cm–2 into single crystal Si does not lead to formation of an amorphous layer. Subsequent annealing at a temperature of 1100°C in a chlorine-containing atmosphere is accompanied by the appearance of D1 and D2 lines of dislocation-related luminescence. The intensity of both lines decreases as the annealing duration is increased from 0.25 to 3 h. As the measurement temperature is increased from 80 to 200 K, the intensities of these lines decrease and the positions of their peaks shift to longer wavelengths.
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页码：50 / 52
页数：2
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