Fluence dependence of femtosecond-laser-induced nanostructure formed on TiN and CrN

被引:0
|
作者
N. Yasumaru
K. Miyazaki
J. Kiuchi
机构
[1] Fukui National College of Technology,Department of Mechanical Engineering
[2] Kyoto University,Institute of Advanced Energy
[3] Eyetec Co.,undefined
[4] Ltd.,undefined
来源
Applied Physics A | 2005年 / 81卷
关键词
Ablation Rate; Ablation Threshold; Nanostructure Formation; Incident Laser Light; Optical Penetration Depth;
D O I
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中图分类号
学科分类号
摘要
The fluence dependence of the nanostructure formation, which has been observed in our recent experiments on femtosecond (fs)-laser ablation, was examined in detail for hard thin films of TiN and CrN. The size D of the periodic fine structure formed with fs-laser pulses can be divided into two regions that depend on the laser fluence F, i.e. the region I where D increases rapidly with increasing F near the ablation threshold, and the region II where D increases slowly with an increase in F and almost saturates. The nanostructure has been observed only in the region I with a narrow width of F. The region II produces a periodic ripple structure whose size is 1/2–4/5 of the wavelength used. The effects of the thermal process and material composition on the nanostructure formation are discussed.
引用
收藏
页码:933 / 937
页数:4
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