Noncontact Deep Level Photo-Thermal Spectroscopy of semi-insulating GaAs

被引：0
|
作者：
J. Xia
A. Mandelis
机构：
[1] University of Toronto,Center for Advanced Diffusion
来源：
The European Physical Journal Special Topics | 2008年 / 153卷
关键词：
GaAs; EUROPEAN Physical Journal Special Topic; Pulse Repetition Frequency; Deep Level Transient Spectroscopy; Free Carrier Concentration;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A purely optical Deep Level Photo-Thermal Spectroscopy has been developed for the defect-state characterization of semi-insulating (SI) GaAs wafers. The methodology utilizes near infrared sub-bandgap absorption to monitor the thermal emission of traps after an optical filling pulse, and the data are analyzed in a rate-window manner by a lock-in amplifier. The technique has been applied to a VGF grown SI-GaAs wafer, and the very first results are presented.
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页码：283 / 285
页数：2
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