n-Type Conductivity of Cu2O Thin Film Prepared in Basic Aqueous Solution Under Hydrothermal Conditions

被引:0
|
作者
Daniel Ursu
Nicolae Miclau
Marinela Miclau
机构
[1] National Institute for Research and Development in Electrochemistry and Condensed Matter,
[2] Timisoara,undefined
[3] Politehnica University Timisoara,undefined
来源
Electronic Materials Letters | 2018年 / 14卷
关键词
-Type semiconductor; Hydrothermal synthesis; Cuprous oxide; Intrinsic ; -type defects;
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学科分类号
摘要
We report for the first time in situ hydrothermal synthesis of n-type Cu2O thin film using strong alkaline solution. The use of copper foil as substrate and precursor material, low synthesis temperature and short reaction time represent the arguments of a new, simple, inexpensive and high field synthesis method for the preparation of n-type Cu2O thin film. The donor concentration of n-type Cu2O thin film obtained at 2 h of reaction time has increased two orders of magnitude than previous reported values. We have demonstrated n-type conduction in Cu2O thin film prepared in strong alkaline solution, in the contradiction with the previous works. Based on experimental results, the synthesis mechanism and the origin of n-type photo-responsive behavior of Cu2O thin film were discussed. We have proposed that the unexpected n-type character could be explained by H doping of Cu2O thin film in during of the hydrothermal synthesis that caused the p-to-n conductivity-type conversion. Also, this work raises new questions about the origin of n-type conduction in Cu2O thin film, the influence of the synthesis method on the nature of the intrinsic defects and the electrical conduction behavior.
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页码:405 / 412
页数:7
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