Cu Substrates with Different Grain Sizes

被引:0
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作者
Jo-Mei Wang
Kai-Jheng Wang
Jenq-Gong Duh
机构
[1] National Tsing Hua University,Department of Materials Science and Engineering
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关键词
Interfacial reaction; grain size; Cu substrate;
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摘要
Cu6Sn5 and Cu3Sn are easily formed at the interface between Sn and Cu during reflow and aging processes. Thick Cu-Sn compounds at the interface become brittle, reducing the mechanical strength of solder joints and increasing the consumption of under bump metallization (UBM). It is noted that intermetallic compound (IMC) growth and substrate consumption are affected by factors such as substrate fabrication, substrate orientation, and substrate microstructure. In this study, to determine the effects of substrate grain size on IMC growth and substrate consumption, pure Sn solder was reflowed on annealed Cu substrates with different grain sizes at 250°C for 30 s to 600 s. It was revealed that Cu substrates with smaller grain sizes exhibited reduced IMC growth. In addition, the interdiffusion coefficients of Cu6Sn5 and Cu3Sn were decreased for the Cu substrate with the smaller grain size. The influence of the Cu substrate grain size on IMC growth and substrate consumption is discussed.
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页码:1549 / 1555
页数:6
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