Mechanism of the transport of nickel along a Si(111) surface in the presence of adsorbed cobalt atoms

被引：0
|
作者：
A. E. Dolbak
B. Z. Ol’shanetskii
S. A. Tiis
机构：
[1] Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian Branch of the
来源：
Journal of Experimental and Theoretical Physics Letters | 1999年 / 69卷
关键词：
68.35.Fx;
D O I：
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学科分类号：
摘要：
The mechanism of the transport of nickel along a Si(111) surface in the presence of adsorbed cobalt atoms is established by LEED and Auger electronic spectroscopy. The mechanism consists of diffusion of nickel atoms through the bulk and segregation of the atoms on the surface during annealing. This mechanism of nickel transport plays the governing role at temperatures below 700°C, where nickel transport along clean silicon surfaces is not observed. It is found that the nickel segregation factor is what determines the lowest temperature at which nickel transport is observed on clean silicon surfaces.
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页码：459 / 461
页数：2
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