Mechanism of the transport of nickel along a Si(111) surface in the presence of adsorbed cobalt atoms

被引：6

作者：

Dolbak, AE ^{[1
]}

Ol'shanetskii, BZ ^{[1
]}

Tiis, SA ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

来源：

JETP LETTERS | 1999年 / 69卷 / 06期

关键词：

D O I：

10.1134/1.568051

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The mechanism of the transport of nickel along a Si(111) surface in the presence of adsorbed cobalt atoms is established by LEED and Auger electronic spectroscopy. The mechanism consists of diffusion of nickel atoms through the bulk and segregation of the atoms on the surface during annealing. This mechanism of nickel transport plays the governing role at temperatures below 700 degrees C, where nickel transport along clean silicon surfaces is not observed. It is found that the nickel segregation factor is what determines the lowest temperature at which nickel transport is observed on clean silicon surfaces. (C) 1999 American Institute of Physics. [S0021-3640(99)00606-4].

引用

页码：459 / 461

页数：3

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