Light helicity detector based on 2D magnetic semiconductor CrI3

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作者
Xing Cheng
Zhixuan Cheng
Cong Wang
Minglai Li
Pingfan Gu
Shiqi Yang
Yanping Li
Kenji Watanabe
Takashi Taniguchi
Wei Ji
Lun Dai
机构
[1] Peking University,State Key Lab for Artificial Microstructure & Mesoscopic Physics and Frontiers Science Center for Nano
[2] Collaborative Innovation Center of Quantum Matter,optoelectronics, School of Physics
[3] Renmin University of China,Beijing Key Laboratory of Optoelectronic Functional Materials & Micro
[4] Peking University,Nano Devices, Department of Physics
[5] National Institute for Materials Science,Academy for Advanced Interdisciplinary Studies
[6] 1-1 Namiki,undefined
[7] Peking University Yangtze Delta Institute of Optoelectronics,undefined
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摘要
Two-dimensional magnetic semiconductors provide a platform for studying physical phenomena at atomically thin limit, and promise magneto-optoelectronic devices application. Here, we report light helicity detectors based on graphene-CrI3-graphene vdW heterostructures. We investigate the circularly polarized light excited current and reflective magnetic circular dichroism (RMCD) under various magnetic fields in both monolayer and multilayer CrI3 devices. The devices exhibit clear helicity-selective photoresponse behavior determined by the magnetic state of CrI3. We also find abnormal negative photocurrents at higher bias in both monolayer and multilayer CrI3. A possible explanation is proposed for this phenomenon. Our work reveals the interplay between magnetic and optoelectronic properties in CrI3 and paves the way to developing spin-optoelectronic devices.
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