Thickness dependence of the structural and electrical properties of ZnO thermal-evaporated thin films

被引：0
|
作者：
A GHADERI
S M ELAHI
S SOLAYMANI
M NASERI
M AHMADIRAD
S BAHRAMI
A E KHALILI
机构：
[1] Islamic Azad University-Tehran Central Branch,Department of Physics
[2] Islamic Azad University,Plasma Physics Research Center, Science and Research Branch
[3] Islamic Azad University,Young Researchers Club, Kermanshah Branch
[4] Islamic Azad University,Department of Physics
[5] Institute for Research of Fundamental Science (IPM),undefined
来源：
Pramana | 2011年 / 77卷
关键词：
Zinc oxide thin film; thermal evaporation; X-ray diffraction; atomic force microscope; electrical conductivity; 73;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
ZnO thin films of different thicknesses were prepared by thermal evaporation on glass substrates at room temperature. Deposition process was carried out in a vapour pressure of about 5.54 × 10 − 5 mbar. The substrate–target distance was kept constant during the process. By XRD and AFM techniques the microstructural characteristics and their changes with variation in thickness were studied. Electrical resistivity and conductivity of samples vs. temperature were investigated by four-probe method. It was shown that an increase in thickness causes a decrease in activation energy.
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页码：1171 / 1178
页数：7
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