Effect of Lanthanum-doping on the Dielectric Properties of Pb(Fe1/2Ta1/2)O3 Relaxor Ferroelectrics

This paper reports the influence of lanthanum-doping on the dielectric behavior of Pb(Fe1/2Ta1/2)O3 relaxor ferroelectrics, where the La ions are incorporated into the B-site of the perovskite constructing unit and the resultant charge imbalance is compensated by the presence of free charge carriers (holes). The formulated compositions were fabricated using one-step preparation method, and a nearly pure perovskite phase was attained, as verified by XRD analysis. Both the dielectric permittivity maximum (ε′max) and the temperature at which ε′max occurs (Tm) are progressively reduced by La-doping. The degree of frequency dispersion, however, is promoted, indicating the weakened ferroelectric couplings among the oxygen octahedra as a result of lanthanum incorporation. Moreover, the breadth of paraelectric to ferroelectric phase transition is broadened with an increase in lanthanum content, due to enhanced inhomogeneity and increase in the number of B-site cations. Frequency spectroscopy at a certain temperature below Tm reveals a widening of the size distribution of ferroelectric nanodomains, which is characteristic of relaxor microstructure, by La-doping.