Studies on growth of N-polar InN films by pulsed metal-organic vapor phase epitaxy

被引：0
|
作者：
Baijun Zhao
Xu Han
Fan Yang
Xin Dong
Yuantao Zhang
机构：
[1] Jilin University,State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering
[2] Chinese Academy of Sciences,Changchun Institute of Applied Chemistry
来源：
Chemical Research in Chinese Universities | 2016年 / 32卷
关键词：
N-Polar; Pulsed metal-organic vapor phase epitaxy; InN;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We reported the growth of N-polar InN films on N-polar GaN/sapphire substrates by pulsed metal-organic vapor phase epitaxy. The crystalline quality, surface morphology, optical and electrical properties of N-polar InN films were investigated in details by varying the breaking time and trimethylindium(TMIn) duration of pulse cycle. It has been found that when the breaking time and the TMIn duration in each cycle remain at 30 and 60 s, respectively, the N-polar InN film obtained exhibits a better crystalline quality and greater optical properties. Meanwhile, the surface morphology and electrical properties of the N-polar InN films also greatly depend on the given growth conditions.
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页码：669 / 673
页数：4
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