Effect of gate–source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors

被引：0
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作者：
Peng Cui
Zhaojun Lin
Chen Fu
Yan Liu
Yuanjie Lv
机构：
[1] Shandong University,School of Microelectronics
[2] National Key Laboratory of Application Specific Integrated Circuit (ASIC),undefined
[3] Hebei Semiconductor Research Institute,undefined
来源：
Applied Physics A | 2018年 / 124卷
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摘要：
In this paper, the AlGaN/GaN heterostructure field-effect transistors (HFETs) with different gate–source spacings were fabricated. Using the measured parasitic source access resistance and the scattering theoretical calculation, it is verified that the gate–source spacing can affect the parasitic source access resistance by altering PCF scattering. This paves a possible way to utilize this effect to improve the performance of AlGaN/GaN HFETs by choosing the optimizing gate-source spacing.
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