Influence of the Self-Heating Effect on the I–V Characteristics of Field Transistors on a Silicon-on-Insulator Structure at High Temperatures

被引:0
|
作者
N. V. Masalskii
机构
[1] Scientific Research Institute of System Analysis,
[2] Russian Academy of Sciences,undefined
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:962 / 965
页数:3
相关论文
共 50 条
  • [31] RADIATION-HARDENED SILICON-ON-INSULATOR JUNCTION FIELD-EFFECT TRANSISTORS FABRICATED BY A SELF-ALIGNED PROCESS
    CHOI, HK
    TSAUR, BY
    CHEN, CK
    [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (03) : 101 - 103
  • [32] Device characteristics of the thin-film silicon-on-insulator power MOSFETs at high temperatures
    Ishibashi, Tsubasa
    Morisawa, Yuka
    Matsumoto, Satoshi
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (06)
  • [33] HIGH FIELD V-I CHARACTERISTICS OF TRANSISTORS
    VANBILJO.L
    [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1965, 19 (05) : 501 - &
  • [34] The dc characteristics of a silicon-on-insulator metal-semiconductor field effect transistor
    Chattopadhyay, P
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (09) : 1036 - 1041
  • [35] RADIATION-HARDENED SILICON-ON-INSULATOR COMPLEMENTARY JUNCTION FIELD-EFFECT TRANSISTORS.
    Tsaur, Bor-Yeu
    Choi, Hong K.
    [J]. 1600, (EDL-7):
  • [36] Self-heating and trapping effects in AlGaN/GaN heterojunction field-effect transistors
    Saidi, I.
    Gassoumi, M.
    Maaref, H.
    Mejri, H.
    Gaquiere, C.
    [J]. JOURNAL OF APPLIED PHYSICS, 2009, 106 (05)
  • [37] β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect
    Zhou, Hong
    Maize, Kerry
    Qiu, Gang
    Shakouri, Ali
    Ye, Peide D.
    [J]. APPLIED PHYSICS LETTERS, 2017, 111 (09)
  • [38] Effects of Self-Heating on fT and fmax Performance of Graphene Field-Effect Transistors
    Bonmann, Marlene
    Krivic, Marijana
    Yang, Xinxin
    Vorobiev, Andrei
    Banszerus, Luca
    Stampfer, Christoph
    Otto, Martin
    Neumaier, Daniel
    Stake, Jan
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (03) : 1277 - 1284
  • [39] Coulomb scattering in high-κ gate stack silicon-on-insulator metal-oxide-semiconductor field effect transistors
    Jimenez-Molinos, F.
    Gamiz, F.
    Donetti, L.
    [J]. JOURNAL OF APPLIED PHYSICS, 2008, 104 (06)
  • [40] A thermal model for static current characteristics of AlGaNGaN high electron mobility transistors including self-heating effect
    Chang, Yuancheng
    Zhang, Yimen
    Zhang, Yuming
    Tong, K.Y.
    [J]. Journal of Applied Physics, 1600, 99 (04):