Study of microwave plasma-assisted chemical vapor deposition of poly-and single-crystalline diamond films

被引：0
|
作者：
A. L. Vikharev
A. M. Gorbachev
A. B. Muchnikov
D. B. Radishchev
机构：
[1] Institute of Applied Physics of the Russian Academy of Sciences,
来源：
Radiophysics and Quantum Electronics | 2007年 / 50卷
关键词：
Diamond Film; Methane Content; Microwave Discharge; Polycrystalline Diamond; Chemical Vapor Deposition Diamond;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We study conditions for microwave plasma-assisted chemical vapor deposition of high-quality single-crystal diamond films in a CVD reactor. These conditions are studied using the results of homoepitaxial growth of polycrystalline diamond films on diamond substrates and on the basis of numerical simulation of the microwave discharge in a CVD reactor. A high-quality single-crystal diamond layer is synthesized on a synthetic, type Ib diamond substrate. The properties of the obtained monolayer are studied by means of Raman and X-ray diffraction spectroscopy as well as optical and atomic-force microscopy.
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页码：913 / 921
页数：8
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