Light emission from silicon nanocrystals

被引:0
|
作者
O. B. Gusev
A. N. Poddubny
A. A. Prokofiev
I. N. Yassievich
机构
[1] Russian Academy of Sciences,Ioffe Physical
来源
Semiconductors | 2013年 / 47卷
关键词
Hole State; Bulk Silicon; Silicon Nanocrystals; Nanocrystal Size; Tight Binding Method;
D O I
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中图分类号
学科分类号
摘要
The main experimental results of studies of the photoluminescence of silicon nanocrystals and theoretical methods developed for the description of optical processes occurring in them are reviewed. Special attention is focused on silicon nanocrystals in the SiO2 matrix that were the object of most of the studies. Two fundamental theoretical methods described in detail are the multiband effective-mass method and the tight-binding method which have found wide application in simulating various processes occurring in nanostructures. A phenomenological model for excitons self-trapped on the surface of oxidized silicon nanocrystals, which has been recently developed on the basis of experimental results obtained by femtosecond spectroscopy, is reported.
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页码:183 / 202
页数:19
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