Scaling behavior of dynamic hysteresis in multiferroic Bi5FeTi3O15 thin films

In this study, Bi5FeTi3O15 (BFTO) thin films were obtained on silicon wafers using a sol–gel process. Advanced multiferroic properties, with a remnant polarization Pr of ~ 28 µC/cm2 and a saturated magnetization Ms of ~ 1.4 emu/cm3, were observed in a sample. The scaling of the dynamic ferroelectric hysteresis as a function of the magnitude E0 and the frequency f of an applied electrical field was investigated. The scaling relationship of the P−E loops was found to take the form 〈A〉 ∝ f−0.19E04.47 at low E0 and 〈A〉 ∝ f−0.05E01.26 at high E0. The exponents of the scaling that domain reversal in the BFTO thin films is insensitive to f at both low and high E0. This indicates the extensive potential applications of BFTO thin films in multi-state storage.